capacitance-analysis

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nikunjmalik306 / pmos-tcad-characterization

Sub-micron p-channel MOSFET design and numerical TCAD simulation using Synopsys Sentaurus: DC/AC characterization, 1 MHz gate capacitances, and channel length scaling analysis (100nm–300nm).

semiconductor tcad mosfet threshold-voltage pmos device-physics short-channel-effects synopsys-sentaurus capacitance-analysis

Updated Nov 6, 2026
Python

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